| PART |
Description |
Maker |
| HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
| EG3013 |
Power MOS tube / IGBT gate driver chip tube
|
EGmicro
|
| TLP250 |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| TLP70107 TLP701 |
IGBT/Power MOS FET gate drive
|
Toshiba Semiconductor
|
| TLP701 |
INDUSTRIAL INVERTERS INVERTER FOR AIR CONDITIONERS IGBT/POWER MOS FET GATE DRIVE
|
Toshiba Semiconductor
|
| TLP351 |
Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter
|
Toshiba Semiconductor
|
| 8810 |
N-channel power MOS field effect tube
|
SHENZHEN FUMAN ELECTRON...
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| HEC4002BT HEC4002BT112 |
Dual 4-input NOR gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, DUAL 4-INPUT NOR GATE, PDSO14
HEF4002B gates; Dual 4-input NOR gate
|
NXP Semiconductors N.V.
Philips
|
| APT32GU30K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT50GP60B2DQ2 APT50GP60B2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
